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CHA2094b
36-40GHz Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC Description
Vds Vds
The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
IN OUT
Vgs1&2
Vgs3
Main Features
Gain & NF ( dB ) Broadband performances : 36-40GHz 3.0dB Noise Figure 21dB gain 1.5dB gain flatness Low DC power consumption, 60mA @ 3.5V Chip size : 1.72 X 1.08 X 0.10 mm 24 20 16 12 8 4 0 34
Typical on wafer measurements :
35
36
37
38
39
40
41
42
Frequency (GHz)
Main Characteristics
Tamb. = 25C Symbol
Fop G P1dB NF
Parameter
Operating frequency range Small signal gain Output power at 1dB gain compression Noise figure
Min
36 18 5
Typ
Max
40
Unit
GHz dB dBm
21 8 3.0 4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20949312 - 08-Nov.-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2094b
Electrical Characteristics
Tamb = +25C, Vd1,2,3 = 3.5V Symbol
Fop G G Gsb Is P1dB VSWRin
36-40GHz Low Noise Amplifier
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Gain flatness over 40MHz ( within -30 ; +75C ) Reverse isolation (1) Output power at 1dB gain compression Input VSWR (1)
Min
36 18
Typ
Max
40
Unit
GHz dB dB dBpp
21 1.5
0.5 25 5 30 8 2.5:1 2.5:1 3.0 3.0:1 3.0:1 4.0 4 +0.4 100
dB dBm
VSWRout Output VSWR (1) NF Vd Noise figure (2) DC Voltage Vd Vg
dB V V mA
-2
3.5 -0.25 60
Id
Bias current (2)
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2 voltage.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Pin Ta Tstg
Parameter
Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Values
5.0 150 -2.0 to +0.4 +15 -40 to +85 -55 to +155
Unit
V mA V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA20949312 - 08-Nov.-99
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Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise Amplifier
CHA2094b
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions : Freq. GHz 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 51,00 52,00 53,00 54,00 55,00 S11 dB -2,96 -3,22 -3,67 -4,43 -5,76 -8,60 -15,20 -24,70 -32,32 -21,29 -14,52 -11,33 -9,96 -9,89 -10,20 -11,51 -13,21 -13,92 -13,55 -13,26 -12,63 -11,41 -10,18 -8,38 -5,83 -4,17 -2,17 -1,17 -0,84 -0,55 -0,36 Vd = 3.5 Volt, Id = 60 mA. S11 / 165,27 155,96 144,32 129,06 107,80 75,37 16,43 -117,32 128,04 -38,29 -70,72 -94,87 -113,38 -129,95 -144,39 -153,53 -157,59 -154,55 -158,17 -169,25 174,58 151,40 125,52 94,26 71,80 49,01 29,23 11,23 -2,48 -14,01 -22,96 S12 dB -48,02 -49,76 -51,68 -53,38 -51,07 -49,11 -43,10 -41,34 -41,14 -40,51 -39,47 -38,30 -37,80 -35,94 -35,21 -34,78 -34,26 -33,87 -33,94 -33,11 -32,50 -32,48 -31,57 -29,97 -31,11 -32,37 -36,86 -34,48 -38,67 -40,49 -42,95 S12 / 140,03 133,48 113,25 148,20 153,30 129,75 102,32 47,85 -5,29 -43,14 -69,20 -90,11 -109,61 -126,74 -146,49 -160,72 -175,92 172,60 156,97 149,30 134,15 126,00 119,05 102,75 79,31 66,58 59,57 52,60 15,86 -6,97 -5,11 S21 dB -16,95 -11,32 -5,73 0,02 5,87 11,83 17,22 19,91 20,48 20,60 20,79 20,92 20,87 20,54 19,98 19,57 18,86 18,41 18,09 17,84 17,56 17,17 16,79 16,21 15,23 13,86 12,36 10,48 8,26 5,94 3,49 S21 / -110,44 -109,43 -112,96 -123,12 -138,63 -163,77 158,34 110,72 71,50 40,20 12,71 -13,60 -38,94 -63,47 -85,35 -105,56 -125,69 -143,91 -160,70 -178,94 162,79 143,77 124,08 102,47 80,21 58,54 38,69 19,05 1,67 -13,96 -27,62 S22 dB -10,05 -10,84 -11,84 -13,68 -15,98 -21,67 -29,55 -17,96 -17,40 -19,96 -24,56 -24,34 -18,55 -14,97 -13,19 -11,91 -10,90 -10,93 -11,24 -10,76 -10,73 -10,27 -9,19 -8,20 -7,79 -7,34 -8,29 -9,08 -9,77 -10,59 -11,16 S22 / -118,86 -124,50 -133,29 -140,35 -152,02 -162,85 -46,20 -70,62 -106,13 -133,62 178,55 95,27 56,67 35,23 15,89 7,58 -5,61 -16,38 -20,60 -22,75 -25,23 -26,04 -30,65 -37,96 -48,28 -61,88 -75,36 -85,34 -96,49 -106,13 -116,76
Ref. : DSCHA20949312 - 08-Nov.-99
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2094b
36-40GHz Low Noise Amplifier
Typical Output Power ( P-1dB gain compression ) Measurements. ( CW on wafer )
Conditions : Vd = 3.5 Volt, Frequency = 38 GHz.
22 Gain & P-1dB ( dB, dBm ) 20 18 16 14 12 10 8 6 4 20 30 40 50 60 Current Id ( mA ) 70 80 90 100 Gain P-1dB
Conditions : Id = 60 mA, Frequency = 38 GHz.
22 Gain & P-1dB ( dB, dBm ) 20 18 16 14 12 10 8 6 4 2.5 3 3.5 Bias voltage Vd ( Volt ) 4 4.5 Gain P-1dB
Ref. : DSCHA20949312 - 08-Nov.-99
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Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise Amplifier
CHA2094b
Typical ( Gain & NF ) versus Id Measurements ( on wafer ).
Conditions : Vd = 3.5 Volt, Frequency = 38 GHz.
24
19 Gain ( dB ) Gain NF
14
9
4 0 10 20 30 40 50 60 70 80 90 Current Id ( mA )
10 9 8 7 6 5 4 3 2 1 0 100
Typical Measurements in Test Jig.
Bias Conditions :
Vd = 3.5 Volt, Id = 50 mA.
24
NF ( dB ) 10 9 8 7 6 NF ( dB ) 5 4 3 2 1 0 47
19 Gain ( dB )
14
GAIN
NF
9
4 36 37 38 39 40 41 42 43 44 45 46 Frequency ( GHz )
Ref. : DSCHA20949312 - 08-Nov.-99
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Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2094b
36-40GHz Low Noise Amplifier
Typical Bias Tuning for Low Noise Operation
The circuit schematic is given below :
Vd 100 IN 100 50 OUT
Vg 1,2
Vg 3
For low noise operation, a separate access to the gate voltages of the two first stages ( Vgs1&2 ), and of the output stage ( Vgs3 ) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and 15 mA for each of the two first stages ( 50 mA for the amplifier ). The first step to bias the amplifier is to tune the Vgs1&2 = -1V, and Vgs3 to drive 20 mA for the full amplifier. Then Vgs1&2 is reduced to obtain 50 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1&2 bias voltage, but keeping the previous value for Vgs3.
Ref. : DSCHA20949312 - 08-Nov.-99
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise Amplifier
Chip Assembly and Mechanical Data
CHA2094b
To Vdd DC Drain supply feed 100pF
IN
OUT
100pF To Vgs 1&2 DC Gate supply feed
100pF
To Vgs 3 DC Gate supply feed
Note : Supply feed should be capacitively bypassed.
1720 10 1125 505
1080 10
415
340
415 710
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA20949312 - 08-Nov.-99
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2094b
36-40GHz Low Noise Amplifier
Ordering Information
Chip form : CHA2094b99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA20949312 - 08-Nov.-99
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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